Venue: Admin. Building Room 108-109
Abstract: Enormous amount of effort and resources have been invested on seeking new generation photovoltaic (PV) technologies, which can reach both materials saving and procedures simplification. Compared with commercially available crystalline silicon (c-Si) solar cells achieved by doping technique in near-surface regions, heterojunction solar cells consisted with high-workfunction layers, such as MoOx (x<3), poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), etc. and n-type c-Si provide a promising new concept with dopant-free and carrier-selective heterocontacts. In combination with advanced light-trapping structures on c-Si surface, the simplified heterojunction of hybrid PEDOT:PSS/c-Si can achieve power conversion efficiencies (PCE) approaching 13%. For this heterojunction solar cell, interface engineering is crucial to promote the performance of photovoltaic devices due to the abilities to optimize the separation of carries and minimize the interfacial recombination. Here, efficient PEDOT:PSS/c-Si heterojunction solar cells with periodic pyramid configurations are present and physical method is firstly used to minimal the interfacial recombination at PEDOT:PSS and c-Si interface. Benefit from the acting force on PEDOT:PSS, perfect interfacial contact is achieved on nanostructured c-Si surface, resulting in an open-circuit voltage beyond 650 mV for this heterojunction solar cell and finally a record PCE over 16%. These results enable a viable route for high-performance and dopant-free heterojunctions solar cell.
